MI Lei,MAO Kun,NIE Hai.An Operational Amplifier Low Temperature Coefficient of Band Gap Reference Source[J].Journal of Chengdu University of Information Technology,2017,(01):41-43.[doi:10.16836/j.cnki.jcuit.2017.01.007]
一种无运放低温系数带隙基准源
- Title:
- An Operational Amplifier Low Temperature Coefficient of Band Gap Reference Source
- 文章编号:
- 2096-1618(2017)01-0041-03
- 分类号:
- TN432
- 文献标志码:
- A
- 摘要:
- 为产生一个低温度系数的基准电源,设计一种无运算放大器的带隙基准电路。通过对晶体管基射级电压进行高阶温度补偿的方式,产生具有更低温度系数的基准电压。其中二阶温度补偿电路采用MOS管,PTAT电流由电流镜实现,省掉运算放大器,节省芯片面积。电路采用0.5 μm BCD工艺进行仿真。在5.8 V供电电源下、-40 ℃～150 ℃的温度内,得到基准电压为1.26～1.262 V,温度系数为8.07×10-6/℃。
- Abstract:
- A reference source for generating a low temperature drift coefficient, low temperature coefficient bandgap reference source without operational amplifiers is proposed in this paper. By using higher-order temperature compensation technology, the reference voltage with lower temperature coefficient is achieved. The second-order temperature compensation circuit constructed by MOSFET. Current mirror is used to realize the PTAT current, without the operational amplifier, Then,The chip area is reduced. The 0.5 μm BCD process is used to design the circuit. Working in 5.8 V power supply, when the temperature changes from -40 ℃ to 150 ℃, the reference voltage varies from 1.26 to 1.262 V, the temperature drift coefficient is only 8.07×10-6/ ℃.
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备注/Memo
收稿日期:2016-07-12