ZHANG Ji-cheng,ZHANG Jian-rong.Study on the Successive Ion Layer Adsorption Reaction by using Spin Coating Method Instead of Pulling the Adsorption Reaction of CdS Films Prepared by the Process[J].Journal of Chengdu University of Information Technology,2016,(06):569-574.
利用旋涂方式代替提拉方式的连续离子层 吸附反应法制备CdS薄膜工艺研究
- Title:
- Study on the Successive Ion Layer Adsorption Reaction by using Spin Coating Method Instead of Pulling the Adsorption Reaction of CdS Films Prepared by the Process
- 文章编号:
- 2096-1618 (2016)06-0569-06
- Keywords:
- materials physics and chemistry; optoelectronic materials; SILAR; improving; thin film; relationship; curve
- 分类号:
- TN304.055
- 文献标志码:
- A
- 摘要:
- 针对连续离子层吸附反应法的吸附不足工艺问题进行改进。采用旋凃方式代替提拉方式的连续离子层吸附反 应法研究改进后的连续离子层吸附反应法工艺条件对薄膜附着性能的影响,并且研究吸附过程中镀膜次数、镀膜时 间、反应物的浓度对薄膜生长过程的影响。运用X射线衍射仪(XRD)对薄膜的晶相组成进行分析表征。对改进后的 方法所制备薄膜的层数和晶粒大小的关系曲线进行分析。结果表明改进后的连续离子层吸附反应法在镀膜层数为 25~30层能有效制备出XRD峰值较好、晶粒较大的CdS薄膜。
- Abstract:
- Aim at the adsorption deficiency of successive ionic layer absorption and reaction(SILAR) method, we made the process improvement. The paper study on the successive ion layer adsorption reaction by using spin coating method instead of pulling the adsorption reaction and researching improved SILAR method of process conditions on the properties of film adhesion, and studied the adsorption process of coating, coating time, concentration of reactants on the influence of thin film growth process. Using XRD analysis of thin film crystal phase composition.The relationship between the number of layers and the grain size of the films prepared by the improved method was analyzed. The results show that the CdS film with better XRD peak value and larger grain size can be produced by the improved continuous ion layer adsorption reaction method in the paper.
参考文献/References:
[1] 邱永华,史伟民,魏光普,等.真空蒸发法制备SnS薄膜及其光电性能研究[J]. 光电子·激光,2006,(7):817-
820.
[2] 马勇,王万录,廖克俊,等.真空蒸发法择优定向生长ZnO薄膜[J].光电子技术,2004,(1):1-3.
[3] 刘本锋. 磁控溅射法沉积硅薄膜的研究[D].武汉:武汉理工大学,2009.
[4] 赵青南. 溅射法玻璃基TiO_2膜、TiO_2/TiN/TiO_2复合膜制备及其结构和性能表征[D].武汉:武汉理工
大学,2004.
[5] 李培德,王福善. 喷涂热解法沉积CulnS_2薄膜[J]. 太阳能学报,1982,(4):401-407.
[6] 卢春林. 电沉积法制备硫族半导体复合薄膜及其光催化性能研究[D].绵阳:中国工程物理研究院,2015.
[7] 解东梅. 丝网印刷纳晶TiO_2薄膜电极的制备与性能研究[D].哈尔滨:哈尔滨工程大学,2007.
[8] 吴科伟. MOCVD法生长ZnO的发光性质及Na掺杂研究[D].杭州:浙江大学,2013.
[9] 殷伟,张金香,崔夕军,等.MOCVD法生长Ga、P掺杂的ZnO薄膜[J].发光学报,2013,(1):82-86.
[10] 伍斌.MOCVD法制备的ZnO纳米结构薄膜特性及其发光器件研究[D].长春:吉林大学,2016.
[11] 胡安正,唐超群. Sol-Gel法制备纳米TiO_2的原料配比和胶凝过程机理探研[J]. 功能材料,2002,
(4):394-397.
[12] 夏启斌,李忠,奚红霞,等.TiO_2的微波辐射Sol-Gel法制备及其光催化性能[J]. 华南理工大学学报:自
然科学版,2003,(11):92-96.
[13] 赵静. 化学水浴法制备硫化镉薄膜的研究[D].兰州:兰州理工大学,2012.
[14] 黎兵,蔡伟,冯良桓,等.化学池沉积法制备CdS多晶薄膜及其性质[J]. 四川大学学报:工程科学
版,2004,(1):49-52.
[15] 敖建平,何青,孙国忠,等.化学水浴沉积CdS薄膜晶相结构及性质[J]. 半导体学报,2005,(7):1347-
1352.
[16] 刘晓新, 靳正过, 步绍静,等. CdS薄膜的SILAR法制备与表征. 无机材料学报[J]. 2004, 19(3): 1-5.
[17] 许显斌. SILAR法TiO_2沉积机理及其高表面积薄膜的制备与结构表征[D].哈尔滨:哈尔滨工业大
学,2010.
[18] 张苓,刘杰,侯明东,等.改进的SILAR法制备ZnO薄膜及其表征[J]. 原子核物理评论,2009,(2):154-157.
[19] NICOLAU Y F. Applications of Surface Science [J]. 1985, 22/23: 1060-1075.
备注/Memo
收稿日期:2016-10-20