WANG Yin,NIE Hai,MAO Kun.A Band-gap Reference with no Operational Amplifier and Low Temperature Coefficient based on BJT Technology[J].Journal of Chengdu University of Information Technology,2019,(03):243-245.[doi:10.16836/j.cnki.jcuit.2019.03.006]
一种基于BJT工艺的无运放低温度系数的带隙基准源
- Title:
- A Band-gap Reference with no Operational Amplifier and Low Temperature Coefficient based on BJT Technology
- 文章编号:
- 2096-1618(2019)03-0243-03
- 分类号:
- TN431
- 文献标志码:
- A
- 摘要:
- 如今集成电路工艺更多采用的是CMOS工艺,因为具有功耗低便于集成等特点。但BJT工艺仍然有不可替代的优点,它具有电驱动能力强上电速度快的特点,且工艺简单,成本更低,在需要高功率大电压的环境中,采用BJT工艺仍然是不错的选择。提出了一种基于BJT工艺的无运放低温度系数的带隙基准源,适用温度范围广,在-40 ℃~140 ℃都具有较好的温度特性。该电路采用重庆二十四所的WX40工艺,测试结果显示能产生较高精度的3.3 V电压源,且电压源抑制比高达85 dB,同时具有极高的线性调整率,可以在11~40 V的电压范围下工作,温漂系数为14 PPM。
- Abstract:
- Today's integrated circuit technology uses a CMOS process because of its low power consumption and ease of integration. However, the BJT process still has irreplaceable advantages. It has the characteristics of strong electric drive capability, fast power-up, simple process and lower cost. It is still a good choice to use the BJT process in environments requiring high power and high voltage. In this paper, a band-gap reference with no operational coefficient and low temperature coefficient based on BJT technology is proposed. It has a wide temperature range and good temperature characteristics in the range of -40 ℃ to 140 ℃. The circuit adopts the WX40 process of Chongqing Analog oundries Co., Ltd. The test results show that it can produce a 3.3 V high-accuracy voltage source, and the power supply rejection is as high as 85 dB. At the same time, it has extremely high linearity adjustmentrate, and can work in the voltage range of 11~40 V.The temperature drift coefficient is 14 PPM.
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备注/Memo
收稿日期:2018-09-14 基金项目:四川省科技计划资助项目(2014FZ0050)