HE Linfeng,NIE Hai,CHEN Jiao.Improvement Analysis of Banba Band-gap Reference Source with High-order Compensation[J].Journal of Chengdu University of Information Technology,2019,(05):466-469.[doi:10.16836/j.cnki.jcuit.2019.05.004]
对于高阶补偿Banba结构带隙基准源的改进分析
- Title:
- Improvement Analysis of Banba Band-gap Reference Source with High-order Compensation
- 文章编号:
- 2096-1618(2019)05-0466-04
- Keywords:
- reference source; Banba structure; band-gap reference source; high-order compensating resistance
- 分类号:
- TN710.4
- 文献标志码:
- A
- 摘要:
- Banba结构是模拟电路中基准源部分的一个基本结构。在针对高阶补偿Banba结构的带隙基准源设计中,其高阶补偿电阻的实际版图大小占整体面积的50%以上。提出了对于高阶补偿Banba结构的改进论证,主要对高阶补偿电阻的有无进行仿真分析,得到对其结构的改善方法。在经过一定的优化后可为大部分通用电路提供稳定低温漂的供电或激励。
- Abstract:
- The Banba structure is a basic structure of reference source in analog circuits.In the design of bandgap reference source of basic Banba structure, the actual layout size of its high-order compensation resistance accounts for more than 50% on the total area. An improved demonstration of the high-ordercompensation Banba structure is proposed to mainly simulate and analyze the existence and absence of high-order compensating resistors, and then the method of improving its structure isobtained.After some optimization, it can provide stable low-temperature drift power supply or excitation for most general circuits.
参考文献/References:
[1] 蒋祥倩,杜西亮,毕克娜,等.一种曲率补偿的带隙基准电压源设计[J].电子与封装,2018,11.
[2] 冯勇剑,胡红平.一种低功耗CMOS带隙基准电压源的实现[J].微电子学,2007(2).
[3] 宗永玲.陈中良.采用分段曲率补偿的新型带隙基准电压源的设计[J].河南科学,2014(9).
[4] H Banba.A CMOS Bandgap Reference Circuit Sub-1-V Operation. IEEE J.of Solid-State Circuits[J],1999,34:670-674.
[5] 倪春晓,赵国清.一种基于厚膜工艺的电流采集电路设计[J].电子与封装,2019(1).
[6] Nanqi Liu,Randy Geiger,Degang Chen.Bandgap Voltage VGO Extraction with Two-Temperature Trimming for Designing Sub-ppm/°C Voltage References[J].IEEE International Symposium on Circuits and Systems(ISCAS),2019(3).
[7] 赵强,吕明,张鉴.带隙电压基准源的设计与分析[J].电子科技,2012(5).
[8] 蒋本福.低功耗带隙基准电压源电路的设计[J].微型机与应用,2017(2).
[9] Keith Sanborn,Dongsheng Ma,Vadim Ivanov.A Sub-1-V Low-Noise Bandgap Voltage Reference[J].IEEE Journal of Solid-State Circuits,2007,11.
[10] HusniHabal,Helmut Graeb.Constraint-Based Layout-Driven Sizing of Analog Circuits[J].IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,2011(6).
[11] 黄灿英,陈艳,朱淑云,等.低功耗CMOS带隙基准电压源的设计[J].固体电子学研究与进展,2016(6).
[12] 王万金,陈群超.低功耗高精度全CMOS基准源的设计[J].电子世界,2016(12).
[13] 毕查德·拉扎维.模拟CMOS集成电路设计[M].陈灿,译.西安:西安交通大学出版社,2003.
[14] SONG B S,GRAYPR.A precision curvature-compensatedCMOS bandgap reference[J].IEEE Solid -State Circuits,1983(1).
[15] ANDERA B.Op-amps and startup circuits for CMOS bandgap references with near 1-V supply[J].IEEE Solid-State Circuits,2002(1).
备注/Memo
收稿日期:2019-03-11基金项目:四川省科技计划资助项目(2014FZ0050)