WANG Xinyu,JIANG Dandan,YAN Zhe.Design of a Band Gap Reference Voltage Source with High Precision and Low Power Consumption[J].Journal of Chengdu University of Information Technology,2024,39(05):560-566.[doi:10.16836/j.cnki.jcuit.2024.05.007]
一种高精度低功耗带隙基准电压源的设计
- Title:
- Design of a Band Gap Reference Voltage Source with High Precision and Low Power Consumption
- 文章编号:
- 2096-1618(2024)05-0560-07
- Keywords:
- bandgap reference; low power consumption; second-order compensation; low temperature coefficient; power rejection ratio
- 分类号:
- TN433
- 文献标志码:
- A
- 摘要:
- 基于0.35 μm CMOS工艺,设计了一种高精度低功耗二阶温度补偿带隙基准电压源。该电路利用双极型晶体管基极-发射极电压的叠加来产生一个二阶温度补偿电压,并与一阶温度补偿电压加权相加得到一个低温度系数的基准电压。带隙基准电压源内部放大器结构采用折叠型共源共栅放大器来提高带隙基准电压源的精度。电路采用3～3.6 V电压供电,基准输出电压为1.2555 V左右。仿真结果表明,在-55 ℃～125 ℃,典型情况下的温度系数为2.03 ppm/℃,电路PSRR在低频时可达-78 dB,整体静态电流只有10.8 μA。与常规带隙基准电压源电路相比,该电路具有低功耗、高精度、高电源电压抑制比、宽工作电压和结构简单等优点。
- Abstract:
- A 0.35 μm CMOS technology-based bandgap reference voltage source, with both high accuracy and minimal power consumption, is the focus of this abstract. The circuit uses the superposition of basic-emitter voltages of bipolar transistors to generate a second-order temperature-compensated voltage, which is weighted with the first-order temperature-compensated voltage to get a reference voltage with a low temperature coefficient. The folded common-source common-gate amplifier is used to improve the accuracy of the bandgap reference voltage source. The circuit uses the 3-3.6 V voltage supply, the benchmark output voltage is about 1.25 V. Simulation results demonstrate that, in the temperature range of -55 ℃-125 ℃, the temperature coefficient is typically2.68 ppm/℃, with a PSRR of -72 dB at low frequency and a static current of only 10.8 μA. This circuit, in comparison to conventional bandgap reference voltage source circuits, has the benefits of low power consumption, high precision, high power supply voltage suppression ratio, wide operating voltage, and a straightforward design.
参考文献/References:
[1] 毕查德·拉扎维.模拟CMOS集成电路设计[M].陈贵灿译.西安:西安交通大学出版社,2003.
[2] 谢海情,王振宇,曾健平,等.一种低温漂高电源电压抑制比带隙基准电压源设计[J].湖南大学学报(自然科学版),2021,48(8):119-124.
[3] Charalambos M A,Savwas K,Julius G.A novel wide-temperature-range,3.9 ppm/℃ CMOS bandgap refer-ence circuit[J].IEEE Journal of Solid-State Circuits,2012,47(2):574-581.
[4] 陈杰浩,郭志弘,胡浩.一种具有高PSRR的分段温度补偿带隙基准[J].微电子学,2023,53(1):8-13.
[5] 张冶,吕辉,任佳锐,等.一种低温度系数带隙基准电压源的设计[J].南开大学学报(自然科学版),2023,56(1):13-18.
[6] 孙帆,黄海波,卢军,等.一种新型的分段曲率补偿带隙基准源设计[J].电子元件与材料,2020,39(1):80-85.
[7] 王轩,刘洁,赖晓玲,等.一种适用于低压差分信号驱动电路的带隙基准源设计[J].微电子学与计算机,2020,37(2):75-79.
[8] TSIVIDIS Y P.Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sources[J].IEEE Journal of Solid -State Circuits,1980,15(6):1076-1084.
[8] 张冶,吕辉,任佳锐,等.一种低温度系数带隙基准电压源的设计[J].南开大学学报(自然科学版),2023,56(1):13-18.
[9] 王纪鹏.具有失调抑制能力的低功耗带隙基准电路[J].电视技术,2022,46(4):1-6.
[10] 崔佳旭,李志远,孙艳梅.一种高PSRR带隙基准电压源的设计[J].黑龙江大学自然科学学报,2022,39(5):597-603.
[11] 唐宇,冯全源.一种低温漂低功耗带隙基准的设计[J].电子元件与材料,2014,33(2):35-38.
[12] 居水荣,朱晓宇,刘锡锋,等.一种高精度低输出电压的带隙基准[J].微电子学,2018,48(2):167-172.
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备注/Memo
收稿日期:2023-06-05