WANG Kang.Ultra Wideband High Linear Sub6G Gain Block[J].Journal of Chengdu University of Information Technology,2024,39(05):567-570.[doi:10.16836/j.cnki.jcuit.2024.05.008]
超宽带高线性Sub6G增益模块
- Title:
- Ultra Wideband High Linear Sub6G Gain Block
- 文章编号:
- 2096-1618(2024)05-0567-04
- Keywords:
- Darlington amplifier; HBT; broadband; active bias; MMIC
- 分类号:
- TN721
- 文献标志码:
- A
- 摘要:
- 基于2 μm GaAs HBT(砷化镓异质结双极型晶体管)工艺设计一款单片微波集成电路射频放大器芯片。整个电路采用达林顿拓扑结构,并在片上实现输入输出匹配。针对达林顿结构放大器线性度低的问题,通过设计有源偏置,提高芯片线性度和输出功率,稳定输入阻抗,降低电路的温度敏感性。
- Abstract:
- A monolithic microwave integrated circuit RF amplifier chip is designed based on a2 μm GaAs HBT.The entire circuit adopted a Darlington topology and achieves input-output matching on-chip.Aiming at the low linearity of the Darlington amplifier,the active bias was designed to improve the chip linearity and output power,make the input impedance stable,and reduce the temperature sensitivity of the circuit.
参考文献/References:
[1] 丁华锋,严维敏,王钟,等.0.1～4 GHz达林顿-共射共基结构的增益模块[J].电讯技术,2010(11): 80-84.
[2] 王晓龙.0.05～6 GHz有源偏置增益模块的设计[D].南京:东南大学,2014.
[3] Lin Q,Wu H,Chen Y J,et al.A 0.5 to 4.0 GHz lowcost broadband GaAs HBT low noise amplifier[C].2019 IEEE MTT-S International Wireless Symposium(IWS).NY,USA: IEEE,2019: 1-3.
[4] 陈仲谋,张博.基于InGaP/GaAs HBT工艺超宽带高线性度单片放大器[J].电子元件与材料,2022,41(1):6.
[5] Nitesh R S,Rajendran J,Ramiah H,et al.A 0.8 mm 2 sub-GHz GaAs HBT power amplifier for 5G application achieving 57.5% PAE and 28.5 dBm maximum linear output power[J].IEEE Access,2019,7: 158808-158819.
[6] 堵沈琪,陈亮,李丹,等.5～6 GHz自适应线性化偏置的InGaP/ GaAs HBT功率放大器[J].电子元件与材料,2020,39(3):59-64.
[7] Kim M,Kim J Y.Design for broadband drive amplifier of frequency split type using GaAs HBT process[J].The Journal of the Institute of Internet,Broadcasting and Communication,2019,19(3): 135-140.
备注/Memo
收稿日期:2023-06-27